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BCR169U
PNP Silicon Digital Transistor Preliminary data Switching circuit, inverter, interface circuit, driver circuit Two ( galvanic) internal isolated Transistors with good matching in one package Built in bias resistor (R1 = 4.7k)
C1 6 B2 5 E2 4
5 6
4
1For calculation of R thJA please refer to Application Note Thermal Resistance
1

3 2 1
VPW09197
R2 R1 TR1 R2 1 E1 2 B1 3 C2
EHA07174
TR2 R1
Type BCR169U
Maximum Ratings Parameter
Marking WSs
Pin Configuration Package 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74
Symbol VCEO VCBO VEBO Vi(on) IC Ptot Tj Tstg
Value 50 50 5 15 100 250 150 -65 ... 150
Unit V
Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 118 C Junction temperature Storage temperature
Thermal Resistance
mA mW C
Junction - soldering point 1)
RthJS
130
K/W
Dec-13-2001
BCR169U
Electrical Characteristics at TA=25C, unless otherwise specified Parameter Symbol Values min. DC Characteristics typ. max.
Unit
Collector-emitter breakdown voltage IC = 100 A, IB = 0 Collector-base breakdown voltage IC = 10 A, IE = 0 Emitter-base breakdown voltage IE = 10 A, IC = 0 Collector cutoff current VCB = 40 V, IE = 0 DC current gain 1) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA Input off voltage IC = 100 A, VCE = 5 V Input on Voltage IC = 2 mA, VCE = 0.3 V Input resistor
AC Characteristics Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz
V(BR)CEO V(BR)CBO V(BR)EBO ICBO hFE VCEsat Vi(off) Vi(on) R1
50 50 5 120 0.4 0.5 3.2
4.7
100 630 0.3 0.8 1.1 6.2
V
nA V
k
fT Ccb
-
200 3
-
MHz pF
1) Pulse test: t < 300s; D < 2%
2
Dec-13-2001
BCR169U
DC Current Gain hFE = f (IC ) VCE = 5V (common emitter configuration)
10 3
Collector-Emitter Saturation Voltage VCEsat = f (I C), hFE = 20
10 2
-
mA
hFE
10 2
10 1
10 1
IC
10 0 10 0 -1 10
0 1
10
10
mA
10
2
10 -1 0
0.1
0.2
0.3
0.4
V
0.55
IC
VCEsat
Input on Voltage Vi(on) = f (IC ) VCE = 0.3V (common emitter configuration)
10 2
Input off voltage Vi(off) = f (IC) VCE = 5V (common emitter configuration)
10 2
mA
mA
10 1
10 1
IC
IC
10 0 10 -1 -1 10
0 1
10 0
10 -1
10 -2
10
10
V
10
2
10 -3 0
1
2
3
V
5
Vi(on)
Vi(off)
3
Dec-13-2001
BCR169U
Total power dissipation Ptot = f (TS )
300
mW
P tot
200
150
100
50
0 0
20
40
60
80
100
120 C
150
TS
Permissible Pulse Load RthJS = f (tp)
Permissible Pulse Load Ptotmax / PtotDC = f (tp)
10 3
K/W
10 3
Ptotmax / PtotDC
10 2
RthJS
10 2
10 1
10 0
D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0
D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
10 1
10 -1 -6 10
10
-5
10
-4
10
-3
10
-2
s
10
0
10 0 -6 10
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
tp
4
Dec-13-2001

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